stW5NA100 sth5na100fi n - channel enhancement mode power mos transistors preliminary data n typical r ds(on) = 2.9 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n gate charge minimised n reduced threshold voltage spread applications n high current, high speed switching n switch mode power supply (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram absolute maximum ratings symbol parameter value unit stW5NA100 sth5na100fi v ds drain-source voltage (v gs = 0) 1000 v v dgr drain- gate voltage (r gs = 20 k w ) 1000 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 4.6 2.9 a i d drain current (continuous) at t c = 100 o c 2.9 1.8 a i dm ( ) drain current (pulsed) 18.4 18.4 a p tot total dissipation at t c = 25 o c 150 60 w derating factor 1.2 0.48 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d stW5NA100 sth5na100fi 1000 v 1000 v < 3.5 w < 3.5 w 4.6 a 2.9 a october 1997 to-247 isowatt218 1 2 3 1 2 3 1/6
thermal data to-247 isowatt218 r thj-case thermal resistance junction-case max 0.83 2.1 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 4.2 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 160 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 1000 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 100 o c 50 250 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10v i d = 2.1 a 2.9 3.5 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 4.2 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 2.1 a 2 5.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1650 127 31 2150 165 41 pf pf pf stW5NA100-sth5na100fi 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 500 v i d = 2.1 a r g = 4.7 w v gs = 10 v 14 12 20 16 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 800 v i d = 4.2 a v gs = 10 v 59 9.4 26.5 83 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 800 v i d = 4.2a r g = 4.7 w v gs = 10 v 94 30 142 132 42 199 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 4.6 18.4 a a v sd ( * ) forward on voltage i sd = 4.2 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4.2 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 1000 14 28 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area stW5NA100-sth5na100fi 3/6
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data stW5NA100-sth5na100fi 4/6
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.75 1 0.029 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 p025c isowatt218 mechanical data stW5NA100-sth5na100fi 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . stW5NA100-sth5na100fi 6/6
|
